A new heterodielectric shifted-core-gate nanotube tunneling field-effect transistor (HD-SCG-NT-TFET) is proposed with a higher ON-state current and a better subthreshold swing (SS) compared with the conventional core-gate NT-TFET structure. The charge plasma phenomenon is employed to induce charge carriers inside the channel and source region by applying an appropriate metal workfunction. A brief comparative analysis of the influence of the high-K gate dielectric on the interface trap charges (ITCs) and the resulting effect on the performance of the nanotube structures is also presented for different direct-current (DC) parameters. A reliability analysis for the nanotube TFET is presented for the first time to test how efficiently the proposed device follows the original characteristics. To address reliability concerns for low-power applications, the nanotube TFET structures are investigated in terms of their I_ON, I_OFF, subthreshold swing (SS), and I_ON/I_OFF ratio. All of the analyses are performed in the presence of negative, neutral, and positive ITCs.

提出了一种新的异质电介质漂移核心栅纳米管隧穿场效应晶体管（HD-SCG-NT-TFET），该晶体管具有比常规核心栅NT-TFET高的导通电流和更好的亚阈值摆幅（SS）结构体。通过施加适当的金属功函数，利用电荷等离子体现象在沟道和源极区域内感应出电荷载流子。简要比较分析高K的影响对于不同的直流（DC）参数，还介绍了界面陷阱电荷（ITC）上的栅极电介质以及对纳米管结构性能的最终影响。首次提出了对纳米管TFET的可靠性分析，以测试所提出的器件遵循原始特性的效率如何。为了解决低功耗应用中的可靠性问题，对纳米管TFET结构的I _ON，I _OFF，亚阈值摆幅（SS）和I _ON / I _OFF比率进行了研究。所有分析都是在负ITC，正ITC和正ITC的情况下进行的。