Long-lasting constant loading commonly exists in silicon-based microelectronic contact, as well as the chemical mechanical polishing area. In this work, the stress relaxation analysis of single crystal silicon coated with an amorphous SiO\(_{2}\) film is performed by varying the maximum indentation depth using molecular dynamics simulation. It is found that during holding, the applied indentation force declines sharply at the beginning and then steadily towards the end of the holding period. The stress relaxation amount of bilayer composites increases as the maximum indentation depth increases. It is also found that the deformation features of SiO\(_{2}\) film and silicon substrate during holding are inherited from the loading process. The SiO\(_{2}\) film during holding is further densified when the maximum indentation depth is equal to or less than a certain value (5.5 nm for the 0.8-nm film). The amount of generated phases and phase distributions of silicon substrate during holding are affected by the plastic deformation of silicon during loading.

硅基微电子触点以及化学机械抛光区域中通常存在持久的恒定负载。在这项工作中，通过使用分子动力学模拟改变最大压痕深度，对涂有非晶SiO \（_ {2} \）膜的单晶硅进行了应力松弛分析。发现在夹持期间，所施加的压入力在夹持期开始时急剧下降，然后在夹持期末稳定下降。双层复合材料的应力松弛量随最大压痕深度的增加而增加。还发现，SiO 2（_ {2} 2）膜和硅衬底在保持期间的变形特征是从加载过程中继承的。SiO \（_ {2} \）当最大压入深度等于或小于某个值（对于0.8 nm膜为5.5 nm）时，在固持过程中的膜会进一步致密。保持期间硅衬底的产生相的数量和相分布受加载期间硅的塑性变形的影响。