当前位置: X-MOL 学术Synth. Met. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
An ester functionalized wide bandgap polythiophene for organic field-effect transistors
Synthetic Metals ( IF 4.4 ) Pub Date : 2021-04-07 , DOI: 10.1016/j.synthmet.2021.116767
Prabhath L. Gamage , Ruwan Gunawardhana , Chandima Bulumulla , Ruvanthi N. Kularatne , Chinthaka M. Udamulle Gedara , Ziyuan Ma , Michael C. Biewer , Mihaela C. Stefan

Amongst organic semiconducting polymers, polythiophenes are an attractive class due to relatively easy synthesis and good optical and electronic properties. Herein, we report wide-bandgap polythiophene constructed by copolymerization of ester-functionalized bithiophene and thiophene vinylene thiophene monomers. The novel polymer, poly (E)-di(nonadecan-9-yl) 5-(2-(thiophen-2-yl)vinyl)-[2,2':5',2''-terthiophene]-3',4''-dicarboxylate (PDCTVT) exhibited moderate hole mobilities in bottom-gate/top-contact organic field-effect transistors up to 2.18 × 10-2 cm2 V-1 s-1 with higher on-to-off ratio ~105.



中文翻译:

用于有机场效应晶体管的酯官能化宽带隙聚噻吩

在有机半导体聚合物中,聚噻吩由于其相对易于合成以及良好的光学和电子性能而成为有吸引力的一类。在本文中,我们报道了通过酯官能化的联噻吩和噻吩亚乙烯基噻吩单体的共聚构造的宽带隙聚噻吩。新型聚合物,聚(E)-二(九烷基壬基-9-基)5-(2-(噻吩-2-基)乙烯基)-[2,2':5',2''-对噻吩] -3' ,4''-二羧酸PDCTVT)在底栅/顶部接触有机场效应晶体管中表现出中等的空穴迁移率,最高可达2.18×10 -2 cm 2 V -1 s -1,具有更高的通断比〜 10 5

更新日期:2021-04-08
down
wechat
bug