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Device Feasibility of Ferroelectric Field-Effect Transistors Using Al-Doped HfO2 Gate Insulator Deposited with H2O Oxygen Precursor during Atomic Layer Deposition Process
Physica Status Solidi (A) - Applications and Materials Science ( IF 2 ) Pub Date : 2021-04-07 , DOI: 10.1002/pssa.202100006
Jin-Ju Kim 1 , So-Jung Yoon 1 , Yeriaron Kim 1, 2 , Seung-Eon Moon 2 , Sung-Min Yoon 1
Affiliation  

Metal–ferroelectric–metal (MFM) capacitors with Pt-/Al-doped HfO2 (Al:HfO2)/TiN structures are characterized to demonstrate the ferroelectricity of the Al:HfO2 thin films deposited by atomic layer deposition with H2O precursor at various annealing conditions. When the crystallization annealing temperature increases from 750 to 850 °C, the value of ferroelectric remnant polarization (2Pr) increases from 11.5 to 17.1 μC cm−2 for the postmetallization annealing (PMA) process, whereas it increases from 8.1 to 11.4 μC cm−2 for the postdeposition annealing (PDA) process. The variations in crystallinity of Al:HfO2 and interfacial properties between the electrodes are analyzed to explore the physical origins to initiate the differences in electrical properties of the MFM capacitors. Using the Al:HfO2 thin film prepared with PMA at 850 °C as a ferroelectric gate insulator, which exhibits a maximum value of 2Pr and polarization switching time as short as 1 μs, the ferroelectric field-effect transistors (FeFETs) are fabricated with metal–ferroelectric–metal–insulator–semiconductor gate stack. The memory on/off ratios are secured to be 2.6 × 104 and 2.0 × 104 after a lapse of retention time of 105 s and after repeated program operations of 104 cycles, respectively.

中文翻译:

在原子层沉积过程中使用掺有H2O氧气前驱体的Al掺杂HfO2栅极绝缘体的铁电场效应晶体管的设备可行性

具有Pt- / Al掺杂的HfO 2(Al:HfO 2)/ TiN结构的金属铁电金属(MFM)电容器的特征在于证明通过H 2 O原子层沉积而沉积的Al:HfO 2薄膜的铁电性在各种退火条件下的前驱体。当结晶退火温度从750°C升高到850°C时,后金属化退火(PMA)过程的铁电残余极化值(2 P r)从11.5升高到17.1μCcm -2,而从8.1升高到11.4μC cm -2用于沉积后退火(PDA)工艺。Al:HfO 2的结晶度变化分析电极之间的界面特性,以探究引发MFM电容器电特性差异的物理原因。使用由PMA在850°C制备的Al:HfO 2薄膜作为铁电栅绝缘体,其最大值为2 P r且极化切换时间短至1μs,因此可以得到铁电场效应晶体管(FeFET)。用金属-铁电-金属-绝缘体-半导体栅堆叠制造。在经过10 5  s的保留时间之后和在10 4个循环的重复编程操作之后,分别将存储器的开/关比确保为2.6×10 4和2.0×10 4
更新日期:2021-05-19
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