The ab initio theory of low-field electronic transport properties such as carrier mobility in semiconductors is well-established. However, an equivalent treatment of electronic fluctuations about a nonequilibrium steady state, which are readily probed experimentally, remains less explored. Here, we report a first-principles theory of electronic noise for warm electrons in semiconductors. In contrast with typical numerical methods used for electronic noise, no adjustable parameters are required in the present formalism, with the electronic band structure and scattering rates calculated from first principles. We demonstrate the utility of our approach by applying it to GaAs and show that spectral features in AC transport properties and noise originate from the disparate time scales of momentum and energy relaxation, despite the dominance of optical phonon scattering. Our formalism enables a parameter-free approach to probe the microscopic transport processes that give rise to electronic noise in semiconductors.

中文翻译：

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从第一原理看半导体中暖电子的电子噪声

该从头诸如半导体中的载流子迁移率之类的低场电子传输特性的理论已广为人知。然而，关于非平衡稳态的电子涨落的等价处理方法很容易通过实验进行探索，目前仍未进行过探索。在这里，我们报道了半导体中暖电子的电子噪声的第一性原理。与用于电子噪声的典型数值方法相比，在当前形式上不需要可调整的参数，电子带的结构和散射率是根据第一原理计算的。通过将其应用于GaAs，我们证明了该方法的实用性，并表明AC传输特性和噪声中的频谱特征源自动量和能量弛豫的不同时间尺度，尽管光学声子散射占主导地位。我们的形式主义使无参数方法能够探查在半导体中引起电子噪声的微观传输过程。