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Corrections to “Design, Optimization, and Realization of a High Performance MOEMS Accelerometer From a Double-Device-Layer SOI Wafer”
Journal of Microelectromechanical Systems ( IF 2.7 ) Pub Date : 2021-04-05 , DOI: 10.1109/jmems.2020.3048739 Qianbo Lu 1 , Jian Bai 1 , Kaiwei Wang 1 , Sailing He 1
Journal of Microelectromechanical Systems ( IF 2.7 ) Pub Date : 2021-04-05 , DOI: 10.1109/jmems.2020.3048739 Qianbo Lu 1 , Jian Bai 1 , Kaiwei Wang 1 , Sailing He 1
Affiliation
In the above article [1]
, the content of this article remains untouched. Only Table III is rectified. The stiffness of the proposed MOEMS accelerometer listed in Table III should be half of that value, which is 0.56 N/m.
中文翻译:
对“通过双层器件SOI晶片设计,优化和实现高性能MOEMS加速度计”的更正
在以上文章中[1]
,本文的内容保持不变。仅有的表三 已纠正。建议的MOEMS加速度计的刚度列于表三 应为该值的一半,即0.56 N / m。
更新日期:2021-04-06
中文翻译:
对“通过双层器件SOI晶片设计,优化和实现高性能MOEMS加速度计”的更正
在以上文章中