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Analysis of Process Variations in W-Band GaN MMIC PAs Using Nonparametric Statistics
IEEE Transactions on Microwave Theory and Techniques ( IF 4.3 ) Pub Date : 2021-02-22 , DOI: 10.1109/tmtt.2021.3058270
Shane Verploegh , Mauricio Pinto , Laila Marzall , Daniel Martin , Gregor Lasser , Zoya Popovic

This article presents an analysis of the effects of amplifier process-related performance variation on the radiation patterns of a ${W}$ -band active transmit antenna array. Based on measured on-wafer $S$ -parameters for about 80 amplifier chips designed in an experimental 90-nm gallium nitride (GaN) on SiC process, a statistical analysis of the array patterns is performed. Several types of probability density functions (pdfs) are generated from measured data and compared to determine which statistical approach is most relevant. We find that a joint distribution that maintains the correlation structure between $|S_{21}|$ and $\angle S_{21}$ is important for an accurate analysis. The monolithic microwave integrated circuits (MMICs) are connected to the waveguide-fed horn antenna elements in the array via microstrip-to-waveguide transitions fabricated on alumina. The transitions are analyzed in full-wave simulations with fabrication tolerances included in the analysis. Finally, the MMIC and transition statistical variations are cascaded, resulting in a quantitative evaluation of spatial power combining. Given a random choice of power amplifier chips in a $4\times 4$ array, the EIRP is shown to vary by ±3 dB at 94 GHz.

中文翻译:

分析工艺变化 w ^非参数统计的带隙GaN MMIC PA

本文介绍了与放大器过程相关的性能变化对天线辐射方向图的影响的分析。 $ {W} $ 带有源发射天线阵列。基于测量的晶圆 $ S $ 对于在SiC工艺中的实验性90nm氮化镓(GaN)中设计的约80个放大器芯片的参数,进行了阵列图案的统计分析。从测量数据中生成几种类型的概率密度函数(pdfs),并将其进行比较以确定哪种统计方法最相关。我们发现一个联合分布保持了之间的相关结构 $ | S_ {21} | $ $ \角度S_ {21} $ 对于准确的分析很重要。单片微波集成电路(MMIC)通过在氧化铝上制作的微带到波导的过渡连接到阵列中的波导馈电喇叭天线元件。在全波仿真中分析过渡,并在分析中包括制造公差。最后,将MMIC和过渡统计变化进行级联,从而对空间功率组合进行定量评估。给定功率放大器芯片中的随机选择 4美元/次4美元 阵列,显示EIRP在94 GHz下变化±3 dB。
更新日期:2021-04-06
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