IN THE MAY 2002 ISSUE OF THIS MAGAZINE, THE LATE Lester F. Eastman and Umesh K. Mishra made the case for what was then a long-shot technology in the world of power semiconductors: gallium nitride (GaN). They presented an optimistic outlook for powerful, rugged radio-frequency amplifiers in the then-nascent broadband wireless networks and in radar, as well as in power-switching applications for the electric grid. They called GaN devices “the toughest transistor yet.”

中文翻译：

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增压半导体：氧化镓可以制造强大的无线电并切换数千伏电压

在2002年5月的《本刊》上，莱斯特·F·伊斯特曼和乌梅什·K·米什拉（Meshra）提出了当时功率半导体领域一项备受瞩目的技术：氮化镓（GaN）。他们对当时新生的宽带无线网络，雷达以及电网的电源开关应用中强大而坚固的射频放大器表示了乐观的看法。他们将GaN器件称为“迄今为止最坚固的晶体管”。