当前位置: X-MOL 学术J. Circuits Syst. Comput. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Floating Memristor and Inverse Memristor Emulators with Electronic Tuning
Journal of Circuits, Systems and Computers ( IF 1.5 ) Pub Date : 2021-04-05 , DOI: 10.1142/s0218126621502248
Kapil Bhardwaj 1 , Mayank Srivastava 1
Affiliation  

The work reports two different configurations to emulate the floating memristor and inverse memristor behavior. The presented circuits are based on a modified concept of active element VDTA (Voltage Differencing Transconductance Amplifier) termed as MVDTA. The reported floating memristor employs only a single MVDTA and single grounded capacitance. On the other end, the floating emulation circuit of inverse memristor emulator is based on two MVDTAs and single grounded capacitance. The behavior of the realized element for both the configurations can be tuned electronically through biasing voltage. Also, there is no employment of any commercial IC or external circuitry for multiplication of analogue voltages which is generally required to implement memristive elements. Along with the circuit implementations, mathematical properties of ideal memristor and inverse memristor considering both symmetric as well as nonsymmetric models are discussed. All the emulation circuits are verified by executing simulations using CMOS 0.18um process technique under PSPICE environment. The reported circuits are also realized using commercially available IC LM13700 and results are presented.

中文翻译:

具有电子调谐功能的浮动忆阻器和反向忆阻器仿真器

该工作报告了两种不同的配置来模拟浮动忆阻器和反向忆阻器行为。所介绍的电路基于称为 MVDTA 的有源元件 VDTA(电压差跨导放大器)的改进概念。报告的浮动忆阻器仅使用一个 MVDTA 和一个接地电容。另一方面,反向忆阻器仿真器的浮动仿真电路基于两个 MVDTA 和单个接地电容。两种配置的已实现元件的行为都可以通过偏置电压进行电子调谐。此外,没有使用任何商业 IC 或外部电路来倍增模拟电压,而这通常是实现忆阻元件所需的。随着电路的实现,讨论了考虑对称和非对称模型的理想忆阻器和逆忆阻器的数学性质。通过使用 CMOS 0.18 执行仿真来验证所有仿真电路um PSPICE环境下的工艺技术。报告的电路也使用市售的 IC LM13700 实现,并给出了结果。
更新日期:2021-04-05
down
wechat
bug