Abstract

Due to the lack of work in structures containing thallium (Tl), this work is devoted to study of Ga₈Tl₂N quantum-dot photodetectors. Parameters are specified first. This structure is shown to have low absorption. Enough quantum efficiency is obtained. This detector works at 360–460 nm and peaked at 410 nm, which can be used in optical coherence tomography applications.

中文翻译：

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TlGaN量子点光电探测器

摘要

由于在含th（Tl）的结构中缺乏工作，因此这项工作致力于研究Ga ₈ Tl ₂ N量子点光电探测器。首先指定参数。示出该结构具有低吸收。获得足够的量子效率。该检测器在360–460 nm范围内工作，并在410 nm处达到峰值，可用于光学相干层析成像应用中。