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On the Raman Scattering, Infrared Absorption, and Luminescence Spectroscopy of Aluminum Nitride Doped with Beryllium
Semiconductors ( IF 0.7 ) Pub Date : 2021-04-05 , DOI: 10.1134/s1063782621030040
I. D. Breev , V. D. Yakovleva , O. S. Kudryavtsev , P. G. Baranov , E. N. Mokhov , A. N. Anisimov

Abstract

The effects of the high-temperature (T = 1880°C) diffusion of beryllium ions and of electron irradiation on the optical properties of single-crystal aluminum nitride is studied. It is shown that the introduction of Be into AlN results in a change in the spectral characteristics of Raman scattering and infrared absorption. The analysis of Raman spectra and infrared adsorption spectra in crystals containing the Be impurity proves that this impurity is a getter of intrinsic defects responsible for the yellow color of the AlN crystal and for the broadening of lines in the spectra.



中文翻译:

铍掺杂氮化铝的拉曼散射,红外吸收和发光光谱

摘要

研究了铍离子的高温(T = 1880°C)扩散和电子辐照对单晶氮化铝光学特性的影响。结果表明,将Be引入AlN会导致拉曼散射和红外吸收的光谱特性发生变化。对含有Be杂质的晶体的拉曼光谱和红外吸收光谱的分析证明,该杂质是固有缺陷的吸收剂,该固有缺陷导致AlN晶体的黄色和谱线的展宽。

更新日期:2021-04-05
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