当前位置: X-MOL 学术Semiconductors › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Structural Features of Textured Zinc-Oxide Films Obtained by the Ion-Beam Sputtering Method
Semiconductors ( IF 0.7 ) Pub Date : 2021-04-05 , DOI: 10.1134/s106378262103012x
V. G. Kostishin , A. Yu. Mironovich , A. V. Timofeev , I. M. Isaev , R. I. Shakirzyanov , A. I. Ril , A. A. Sergienko

Abstract

Textured ZnO films obtained on amorphous substrates using the ion-beam sputtering method are studied. X-ray diffraction and atomic-force microscopy methods show that the resulting films have a polycrystalline structure immediately after deposition. It is established that further annealing of the samples in the temperature range from 200°C to 500°C results in recrystallization, which leads to changes in the grain size and surface roughness. A dependence of the crystallization intensity on the deposition conditions is found, which is related to the number of defects in the unannealed films. In films with an initially more perfect structure, heat treatment at 500°C results in the growth of grains by more than 2 times and a decrease in the roughness by ∼40%.



中文翻译:

离子束溅射法获得带纹理的氧化锌薄膜的结构特征

摘要

研究了使用离子束溅射法在非晶态衬底上获得的带纹理的ZnO薄膜。X射线衍射和原子力显微镜法显示,沉积后得到的膜立即具有多晶结构。可以确定的是,样品在200°C至500°C的温度范围内进一步退火会导致重结晶,从而导致晶粒尺寸和表面粗糙度发生变化。发现结晶强度与沉积条件的相关性,其与未退火膜中的缺陷数量有关。在最初具有更完美结构的薄膜中,在500°C的热处理导致晶粒的生长超过2倍,粗糙度降低约40%。

更新日期:2021-04-05
down
wechat
bug