Abstract

A study of the electroluminescence of asymmetric InAs/InAs_{1 – y}Sb_y/InAsSbP light-emitting diode heterostructures with a molar fraction of InSb in the ternary solid solution in the active region y = 0.15 and y = 0.16 in the temperature range 4.2–300 K is reported. It is found on the basis of experimental data that a staggered type-II heterojunction is formed at the InAs_{1 – y}Sb_y/InAs_0.41Sb_0.28P_0.40 heterointerface. It is shown that interfacial radiative transitions at the type-II heterointerface make a dominant contribution in the temperature range of 4.2–180 K. This enables minimization of the temperature dependence of the operating wavelength of a light-emitting diode.

中文翻译：

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用交错的II型InAsSb / InAsSbP异质结抑制异质结构中波长的温度依赖性

摘要

研究InAs / InAs _{1- y} Sb _y / InAsSbP不对称InSb在有源区y = 0的三元固溶体中的发光结构的电致发光。15并且y = 0 。据报道，温度范围为4.2-300 K时为16。根据实验数据发现，在InAs _{1 – y} Sb _y / InAs _0.41 Sb _0.28 P _0.40处形成了交错的II型异质结。异质接口。结果表明，在4.2–180 K的温度范围内，II型异质界面的界面辐射跃迁起了主要作用。这使得发光二极管的工作波长对温度的依赖性最小。