Abstract

The diffusion of indium atoms in silicon-dioxide films previously implanted with arsenic ions with different energies is studied in relation to the temperature of postimplantation annealing. It is established that the diffusion properties of indium depend on the presence of arsenic atoms in the film and their energy. An increase in the As content in the region of the average projective range of In⁺ ions prevents the diffusion of In towards the SiO₂ film surface at high annealing temperatures and stimulates the diffusion of In deep into the film in the form of a monovalent interstitial site. The experimentally observed effects are interpreted on the assumption of the formation of In–As pairs in neighboring substitutional positions in the SiO₂ matrix.

中文翻译：

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注入As +离子的SiO 2薄膜中In原子的扩散

摘要

研究了铟原子在预先注入不同能量砷离子的二氧化硅薄膜中的扩散与注入后退火温度的关系。已经确定，铟的扩散特性取决于膜中砷原子的存在及其能量。在In ⁺离子的平均射程范围内，As含量的增加会阻止In在高退火温度下向SiO ₂膜表面的扩散，并以单价间隙的形式刺激In深入膜中地点。实验观察到的效果是基于在SiO ₂基质中相邻取代位置上形成In-As对的假设来解释的。