In this report we investigate structural and electrical properties of epitaxial Chemical Vapor Deposition quasi-free-standing graphene on an unintentionally-doped homoepitaxial layer grown on a conducting 4H–SiC substrate 4° off-axis from the basal [0001] direction towards [11-20]. Due to high density of SiC vicinal surfaces the deposited graphene is densely stepped and gains unique characteristics. Its morphology is studied with atomic force and scanning electron microscopy. Its few-layer character and p-type conductance are deduced from a Raman map and its layers structure determined from a high-resolution X-ray diffraction pattern. Transport properties of the graphene are estimated through Hall effect measurements between 100 and 350 K. The results reveal an unusually low sheet resistance below 100 Ω/sq and high hole concentration of the order of 10¹⁵ cm⁻². We find that the material's electrical properties resemble those of an epitaxially-grown SiC PIN diode, making it an attractive platform for the semiconductor devices technology.

在本报告中，我们研究了外延化学气相沉积准自立石墨烯的结构和电学性质，该石墨烯生长在从基底[0001]方向向[11]偏离轴4°的导电4H-SiC衬底上生长的无意掺杂的同质外延层上-20]。由于SiC毗连表面的高密度，沉积的石墨烯被密集地步进并获得了独特的特性。用原子力和扫描电子显微镜研究了它的形态。它的几层特性和p型电导是从拉曼图推导出来的，其层结构是根据高分辨率X射线衍射图确定的。石墨烯的传输特性是通过100至350 K之间的霍尔效应测量来估算的。¹⁵ 厘米^-2。我们发现该材料的电学特性类似于外延生长的SiC PIN二极管的电学特性，使其成为半导体器件技术的诱人平台。