In this work, the design and fabrication of a Cu/p-Si/Pt Schottky photodetector with a simple structure is investigated. The mechanism of electron flow is explained using internal photoemission theory, which is further applied to make the fabricated devices reach a high responsivity of 0.542 mA/W at 0–V bias. The investigation revealed that the rapid thermal annealing process could significantly influence the device characteristics. Variations in Schottky barrier height and series resistance of the photodetectors were also analyzed and correlated with the device responsivity. With proper conditions to improve the Pt/Si ohmic contact, the device performance can be enhanced.

中文翻译：

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硅基光电探测器，用于红外电信应用

在这项工作中，研究了具有简单结构的Cu / p-Si / Pt肖特基光电探测器的设计和制造。使用内部光发射理论解释了电子流动的机理，该理论进一步应用于使制造的器件在0V偏压下达到0.542 mA / W的高响应度。调查显示，快速的热退火工艺可能会严重影响器件的特性。还分析了光电探测器的肖特基势垒高度和串联电阻的变化，并将其与器件的响应度相关联。在适当的条件下改善Pt / Si欧姆接触，可以提高器件性能。