We report laser emission from gallium nitride (GaN) microrods that are introduced into mammalian cells and the application of these microrods for cell labeling. GaN microrods were grown on graphene-coated SiO₂/Si substrates by metal-organic vapor phase epitaxy. The GaN microrods are easily detached from the substrates because of the weakness of the van der Waals forces between GaN and graphene. The uptake of microrods into HeLa cells via endocytosis and viability after uptake were investigated. Normal cellular activities, including migration and division, were observed over 2 weeks in culture. Furthermore, the photoluminescence spectra of the internalized microrods exhibited sharp laser emission peaks with a low lasing threshold of 270 kW/cm².

我们报告了从引入到哺乳动物细胞中的氮化镓（GaN）微棒发出的激光发射以及这些微棒在细胞标记中的应用。GaN微棒通过金属有机气相外延生长在涂有石墨烯的SiO ₂ / Si衬底上。由于GaN和石墨烯之间的范德华力较弱，因此GaN微棒很容易从基板上脱落。研究了微棒通过内吞作用被摄取到HeLa细胞中的能力以及摄取后的生存能力。在培养2周内观察到正常的细胞活动，包括迁移和分裂。此外，内在化的微棒的光致发光光谱显示出具有270kW / cm ²的低激光阈值的尖锐的激光发射峰。