ABSTRACT

After thorough optical characterization of the indium-tin-oxide (ITO)-plasmonic material, a V-shaped ITO based highly efficient electro-absorption modulator (EAM) is designed, simulated, and proposed with 220 nm and 350 nm waveguide height to meet the explosive demand for miniature photonic integrated circuits (PICs) and high-speed optical communication systems. Comsol Multiphysics based rigorous finite-element-method (FEM) is used for optimizing the geometrical structure of the EAMs, i.e. V-shape and various dimensions for 1550 nm operating wavelength supporting single-mode transverse magnetic (TM) polarized light. The simulated results of the V-shaped ITO-plasmonic material based EAMs show an enhanced performance as compared to most of the contemporary ITO based EAMs regarding insertion loss (IL) ≈0.031 dB/$\text{μ}\mathrm{m}$ and 0.025 dB/$\text{μ}\mathrm{m}$, extinction ratio (ER) ≈7.02 dB/$\text{μ}\mathrm{m}$ and 11.04 dB/$\text{μ}\mathrm{m}$, figure-of-merit (FOM) ≈226 and 441, for the EAMs with 220 nm and 350 nm waveguide height, respectively. These results are significant for the fabrication of next-generation photonic integrated circuits.

摘要

在对氧化铟锡（ITO）等离子体材料进行全面的光学表征后，设计，模拟了基于V形ITO的高效电吸收调制器（EAM），并提出了220 nm和350 nm的波导高度以满足对微型光子集成电路（PIC）和高速光通信系统的爆炸性需求。基于Comsol Multiphysics的严格有限元方法（FEM）用于优化EAM的几何结构，即V形和1550 nm工作波长的各种尺寸，支持单模横向磁（TM）偏振光。与大多数当代基于ITO的EAM相比，基于V形ITO-等离子体材料的EAM的模拟结果显示出更高的性能，插入损耗（IL）≈0.031 dB /$\text{μ}\mathrm{米}$ 和0.025 dB /$\text{μ}\mathrm{米}$消光比（ER）≈7.02dB /$\text{μ}\mathrm{米}$ 和11.04 dB /$\text{μ}\mathrm{米}$分别为波导高度为220 nm和350 nm的EAM的品质因数（FOM）≈226和441。这些结果对于下一代光子集成电路的制造是重要的。