The magnetoresistance in weak magnetic fields is calculated in graphene containing “short-range” scatterers causing isotropic intra- and inter-valley scattering and “long-range” scatterers characterized by absence of backscattering within a self-consistent Born approximation. When “short-range” scatterers are dominant, the magnetoresistance is negative and has a double-dip structure in the vicinity of zero energy, qualitatively in agreement with the results obtained in a constant broadening approximation, where energy independent broadening is introduced and vertex corrections are neglected. With the increase in the strength of “long-range” scatterers, the magnetoresistance becomes positive and has a double-peak structure in agreement with previous results obtained for scatterers with a Gaussian potential and realistic charged impurities.

中文翻译：

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石墨烯中正磁阻和负磁阻的交叉：缺少背向散射的作用

在弱磁场中的磁阻是在石墨烯中计算的，该石墨烯包含引起各向同性的谷内和谷间散射的“短程”散射体和特征在于自洽Born近似内没有反向散射的“长程”散射体。当“短程”散射体占优势时，磁阻为负且在零能量附近具有双倾结构，在质量上与在恒定展宽近似中获得的结果一致，其中引入了能量独立展宽并进行了顶点校正被忽略。随着“远程”散射体强度的增加，磁阻将变为正值，并具有双峰结构，这与先前对具有高斯势和实际带电杂质的散射体所获得的结果一致。