Through-vias may radiate electromagnetic waves propagating in the substrate of 2.5D integration interposers under the excitation of high-frequency and high-speed signals carried by vias, thus inducing parasitic interference and edge radiation. In order to suppress electromagnetic interference (EMI) between through-silicon vias (TSV) on the silicon interposer, a 6G-B-TSV (Bar TSV) circular cage shield structure is proposed. Its shielding effect is superior to the unshielded structure and the traditional cylindrical TSV grounded shielding structure. In order to suppress EMI between the two cross-layer signal channels on the organic interposer, a 6G-B-Via shielding structure and a shielding fence structure consisting of single-row grounded B-Vias are proposed. Other, a design with B-Via fence on the edge of the substrate to suppress edge radiation is further proposed. The comparison of the simulation results shows the superiority of the design in shielding and suppression effect. Finally, the actual test results of samples verify the effectiveness of the structural designs and simulation schemes.

在通孔承载的高频和高速信号的激发下，通孔可能会辐射在2.5D集成中介层的基板中传播的电磁波，从而引起寄生干扰和边缘辐射。为了抑制硅中介层上的硅通孔（TSV）之间的电磁干扰（EMI），提出了一种6G-B-TSV（Bar TSV）圆形笼式屏蔽结构。它的屏蔽效果优于非屏蔽结构和传统的圆柱TSV接地屏蔽结构。为了抑制有机中介层上两个跨层信号通道之间的EMI，提出了6G-B-Via屏蔽结构和由单行接地B-Vias组成的屏蔽围栏结构。其他，进一步提出了在衬底的边缘上具有B-Via栅栏以抑制边缘辐射的设计。仿真结果的比较表明，该设计在屏蔽和抑制效果方面具有优势。最后，样品的实际测试结果验证了结构设计和模拟方案的有效性。