High quality CuIn_0.8Ga_0.2S₂(CIGS) absorber material for thin film solar cells applications was deposited on soda lime glass substrate through the close spaced vapor transport (CSVT) technique. Deposition conditions were chosen to obtain high quality films. CIGS thin layer was investigated by scanning electron microscope (SEM), X-Ray diffraction (XRD), Vis-NIR spectroscopy and Hall Effect measurements. The temperature dependent Hall Effect measurements in the range 80–400 K have been performed. Activation energies were estimated from the Arrhenius plot of the conductivity versus 1/T and were42 meV and 15 meV at high and low temperature regimes, which coincide with the activation energies of the Cu vacancy (V_Cu) and the Ga vacancy (V_Ga), respectively. The mobility's temperature dependence of the charge was discussed and the predominant scattering mechanisms were assigned to the ionized impurity and non-polar optical phonon scattering at low and high temperature regimes, respectively.

通过近距离气相传输（CSVT）技术将用于薄膜太阳能电池应用的高质量CuIn _0.8 Ga _0.2 S ₂（CIGS）吸收剂材料沉积在钠钙玻璃基板上。选择沉积条件以获得高质量的膜。CIGS薄层通过扫描电子显微镜（SEM），X射线衍射（XRD），Vis-NIR光谱和霍尔效应测量进行了研究。已经执行了80-400 K范围内与温度相关的霍尔效应测量。根据电导率与1 / T的阿伦尼乌斯曲线估算活化能，在高温和低温条件下活化能分别为42 meV和15 meV，这与Cu空位的活化能（V _Cu）和Ga空位（V _Ga）。讨论了电荷对迁移率的温度依赖性，并分别将主要的散射机理分配给了低温和高温条件下的电离杂质和非极性光子声子散射。