Intentional electromagnetic interference is a serious threat to the safety of electronic devices. Multiple electromagnetic pulses will be coupled and transmitted to electronic devices through the cables. Accumulative effects are generated, which make it easier for damage to occur in the electronic devices. In this article, the working principle of micro-silicon acceleration sensors is introduced. The accumulative effects of multiple pulses on acceleration sensors is studied by a large number of injection experiments. The accumulation trends of multiple pulses with different pulse numbers and intervals are analyzed. The damaged structures inside abnormal sensor amplifiers were observed via optical microscopy and scanning electron microscopy. The experimental results show that the accumulative effect is strengthened with increased pulse number or decreased pulse interval, and the threshold voltage for multiple pulses on the acceleration sensor decreases. The threshold voltage for a single pulse is 321.57 V. When the pulse interval is 1 μs and the pulse number is 5, the threshold voltage for multiple pulses is 163.42 V, which is reduced by 49.12% compared with a single pulse. These results provide a reference for the damage design of electromagnetic pulse weapons.

故意的电磁干扰是对电子设备安全的严重威胁。多个电磁脉冲将通过电缆耦合并传输到电子设备。产生累积效应，使电子设备更容易发生损坏。本文介绍了微硅加速度传感器的工作原理。通过大量的注入实验研究了多个脉冲对加速度传感器的累积效应。分析了不同脉冲数和间隔的多个脉冲的累积趋势。通过光学显微镜和扫描电子显微镜观察异常传感器放大器内部的损坏结构。实验结果表明，随着脉冲数的增加或脉冲间隔的减小，累积效应增强，加速度传感器上多个脉冲的阈值电压降低。单脉冲的阈值电压为321.57 V。当脉冲间隔为1 μs，脉冲数为5时，多脉冲的阈值电压为163.42 V，与单脉冲相比降低了49.12%。这些结果为电磁脉冲武器的损伤设计提供了参考。与单脉冲相比为 12%。这些结果为电磁脉冲武器的损伤设计提供了参考。与单脉冲相比为 12%。这些结果为电磁脉冲武器的损伤设计提供了参考。