InGaN-based blue light-emitting diodes (LEDs), with their high efficiency and brightness, are entering the display industry. However, a significant gap remains between the expectation of highly efficient light sources and their experimental realization into tiny pixels for ultrahigh-density displays for augmented reality. Herein, we report using tailored ion implantation (TIIP) to fabricate highly efficient, electrically-driven pixelated InGaN micro-LEDs (μLEDs) at the mid-submicrometre scale (line/space of 0.5/0.5 μm), corresponding to 8,500 pixels per inch (ppi) (RGB). Creating a laterally confined non-radiative region around each pixel with a controlled amount of mobile vacancies, TIIP pixelation produces relatively invariant luminance, and high pixel distinctiveness, at submicrometre-sized pixels. Moreover, with the incomparable integration capability of TIIP pixelation due to its planar geometry, we demonstrate 2,000 ppi μLED displays with monolithically integrated thin-film transistor pixel circuits, and 5,000 ppi compatible core technologies. We expect that the demonstrated method will pave the way toward high-performance μLED displays for seamless augmented-reality glasses.

基于 InGaN 的蓝色发光二极管 (LED) 以其高效率和高亮度正在进入显示行业。然而，在对高效光源的期望与将其实验实现为用于增强现实的超高密度显示器的微小像素之间仍存在显着差距。在此，我们报告了使用定制离子注入 (TIIP) 来制造中亚微米级（0.5/0.5 μm 的线/空间）的高效、电驱动像素化 InGaN micro-LED (μLED)，对应于每英寸 8,500 个像素(ppi) (RGB)。TIIP 像素化在每个像素周围创建一个横向限制的非辐射区域，具有可控的移动空位量，在亚微米大小的像素处产生相对不变的亮度和高像素独特性。而且，TIIP 像素化由于其平面几何形状而具有无与伦比的集成能力，我们展示了具有单片集成薄膜晶体管像素电路和 5,000 ppi 兼容核心技术的 2,000 ppi μLED 显示器。我们预计所展示的方法将为实现无缝增强现实眼镜的高性能 μLED 显示器铺平道路。