Abstract

Microwave absorption of partially gated two-dimensional electron systems in GaAs/AlGaAs heterostructures is studied, and a new family of proximity plasma excitations is discovered. It is established that these plasma excitations are associated with a metallic gate that partially screens two-dimensional electron system. Laws of dispersion are determined for strip and disk gates. Experimental data are in excellent agreement with the developed theory. A special charged mode (that of a relativistic plasmon) is also observed. A unique feature of this plasmon is the dependence of its properties on an external electrical circuit.

中文翻译：

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部分门控二维电子系统中的等离子体激发新家族

摘要

研究了GaAs / AlGaAs异质结构中部分门控二维电子系统的微波吸收，并发现了新的近距离等离子体激发家族。已经确定这些等离子体激发与部分屏蔽二维电子系统的金属栅极相关。确定条形和盘式浇口的弥散规律。实验数据与已开发的理论非常吻合。还观察到一种特殊的带电模式（相对论等离子体激元）。该等离子体激元的独特之处在于其特性对外部电路的依赖性。