Abstract

Possible mechanisms of the emergence of exciton and trion traps at room temperature and the dynamics of relaxation processes occurring in them are discussed, based on an analysis of the results from experiments on photon echoes in thin films of zinc oxide and doped silicon. The current–voltage characteristics recorded for such films with traps displaying the memristor effect are studied, and the influence traps exert on the parameters of such characteristics is established.

中文翻译：

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激子和三极阱形式的量子尺寸物体：它们在氧化锌薄膜的忆阻器特性的激子部分阻滞中的作用

摘要

在对氧化锌和掺杂硅薄膜中光子回波的实验结果进行分析的基础上，讨论了室温下激子和三重陷阱的出现的可能机制以及其中发生弛豫过程的动力学。研究了记录有忆阻效应的此类薄膜的电流-电压特性，并建立了陷阱对此类特性参数的影响。