We are proposing a next-generation graphene nanoribbon field-effect transistor (GNRFET) with superlattice source, channel, and drain (SLSCD-GNRFET), with significantly improved switching performance. The presence of superlattice in each region is for energy filtering. The simulation results indicate that the addition of an appropriate superlattice in the channel region, it reduces the subthreshold swing. Also, using proper superlattice in the drain region leads to an increase of more than a decade in the I_ON/I_OFF ratio by intensely reducing the OFF-current. These improvements make the proposed transistor potentially suitable for the next-generation logical digital applications. Comparison of the simulation results for the proposed SLSCD-GNRFET with those of the conventional GNRFET, its tunneling counterpart (GNRTFET), and the one with superlattice source (SLS-GNRFET) show that the device OFF-current and subthreshold swing have improved significantly.

我们提出了一种具有超晶格源，沟道和漏极（SLSCD-GNRFET）的下一代石墨烯纳米带场效应晶体管（GNRFET），其开关性能得到了显着改善。每个区域中超晶格的存在是为了进行能量过滤。仿真结果表明，在通道区域添加适当的超晶格可以减小亚阈值摆幅。同样，在漏极区使用适当的超晶格会导致I _ON / I _{OFF增加十倍以上}通过极大地减小截止电流来实现比率。这些改进使所提出的晶体管潜在地适合于下一代逻辑数字应用。将拟议的SLSCD-GNRFET与常规GNRFET，其隧道对应物（GNRTFET）和具有超晶格源的模拟结果（SLS-GNRFET）的仿真结果进行比较，结果表明器件的关断电流和亚阈值摆幅得到了显着改善。