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Field Effect and Spin-Valve Effect in the PbSnTe Topological Crystalline Insulator
Optoelectronics, Instrumentation and Data Processing Pub Date : 2021-03-20 , DOI: 10.3103/s8756699020050131
A. S. Tarasov , V. A. Golyashov , D. V. Ishchenko , I. O. Akhundov , A. E. Klimov , V. S. Epov , A. K. Kaveev , S. P. Suprun , V. N. Sherstyakova , O. E. Tereshchenko

Abstract

The characteristics of MIS structures based on insulating PbSnTe:In films grown by molecular beam epitaxy (MBE) with compositions near the band inversion are studied. It is shown that a number of their features can be induced by a ferroelectric phase transition with the Curie temperature in the range of 15-20 K. The injection and detection of spin-polarized electrons in PbSnTe:In are studied by using ferromagnetic contacts Co and Co\({}_{40}\)Fe\({}_{40}\)B\({}_{20}\). A spin-valve effect is discovered by measuring the magnetoresistance in local geometry at a distance of more than 30 \(mu\)m from ferromagnetic contacts. The presence of a surface spin-polarized state with a linear dispersion law is demonstrated by means of the photoemission with angular and spin resolution.



中文翻译:

PbSnTe拓扑晶体绝缘子的场效应和自旋阀效应

摘要

研究了基于分子束外延(MBE)生长的绝缘PbSnTe:In薄膜的MIS结构的特性,该薄膜具有接近能带反转的组成。结果表明,居里温度在15-20 K范围内的铁电相变可以诱导它们的许多特征。使用铁磁触点Co研究了PbSnTe:In中自旋极化电子的注入和检测。和Co \({} _ {40} \) Fe \({} _ {40} \) B \({} _ {20} \)。通过在距离大于30μ(μ)的局部几何形状中测量磁阻来发现自旋阀效应m来自铁磁触点。通过具有角分辨率和自旋分辨率的光发射证明了具有线性色散定律的表面自旋极化态的存在。

更新日期:2021-03-21
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