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Transport Properties of Two-Dimensional Topological Insulators and Excitonic Condensates
Optoelectronics, Instrumentation and Data Processing Pub Date : 2021-03-20 , DOI: 10.3103/s8756699020050027
M. V. Boev , L. S. Braginskii , V. M. Kovalev , L. I. Magarill , M. M. Mahmoodian , M. V. Entin

Abstract

The paper reviews studies of the Laboratory of Theoretical Physics of the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences. Two research directions are discussed: transport properties of two-dimensional excitonic systems and electron transport in two-dimensional topological insulators. Particular attention is given to excitonic systems in the mode of Bose–Einstein condensate and to the theory of conductivity of two-dimensional topogical insulator with a thickness close to the critical one caused by developed network of edge states permeating the sample.



中文翻译:

二维拓扑绝缘子和激子冷凝物的输运性质

摘要

这篇论文回顾了俄罗斯科学院西伯利亚分校Rzhanov半导体物理研究所理论物理实验室的研究。讨论了两个研究方向:二维激子系统的输运性质和二维拓扑绝缘子中的电子输运。特别注意以玻色-爱因斯坦冷凝物形式的激子系统,以及二维拓扑绝缘子的电导率理论,该理论厚度接近于由渗透到样品中的边缘状态网络引起的临界临界厚度。

更新日期:2021-03-21
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