Abstract

The results of investigating the generation of strained nanoheterostructures based on compounds with materials of group IV (Ge, Si, Sn) are presented. It is established how silver, tin, and lead atoms diffuse over the surface and what temperature dependences of diffusion coefficients are specific to atoms of these elements. It is shown that the diffusion of silver, tin, and lead atoms follows the mechanism of solid-phase wetting with generation of surface phases. The experimental data are provided that indicate the dominating role of edge dislocations and dislocation complexes of edge type in relaxation of Ge/Ge\({}_{0.5}\)Si\({}_{0.5}\)/Si(001) heterostructure. Tin-rich islands with Si pedestal on Si(001) substrate were obtained by the molecular beam epitaxy method. Firstly, the Sn film was applied on the Si surface. During the subsequent annealing an array of Sn islands, which were further used as catalysts for growing nanoobjects, was formed. Tin-rich islands with Si pedestal are formed after deposition of silicon at temperatures of 300–450\({}^{\circ}\)C on the surface with Sn islands. The growth of islands with pedestal occurred by the vapor–liquid–crystal mechanism. Intense photoluminescence was revealed from the tin-rich islands with Si pedestals in the wavelength range 1.3–1.7 \(\mu\)m.

中文翻译：

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基于Si，Ge和Sn的应变纳米异质结构的分子束外延

摘要

给出了研究基于具有IV族材料（Ge，Si，Sn）的化合物产生的应变纳米异质结构的结果。已经确定了银，锡和铅原子如何在表面上扩散，以及扩散系数的温度依赖性对这些元素的原子是特定的。结果表明，银，锡和铅原子的扩散遵循固相润湿机理并产生表面相。提供的实验数据表明边缘位错和边缘类型的位错复合体在Ge / Ge \（{} _ {0.5} \） Si \ {{} _ {0.5} \}弛豫中的主导作用/ Si（001）异质结构。通过分子束外延法获得了在Si（001）衬底上具有Si基座的富锡岛。首先，将Sn膜涂覆在Si表面上。在随后的退火过程中，形成了锡岛阵列，该锡岛进一步用作生长纳米物体的催化剂。具有锡基座的富锡岛是在温度为300-450 \（{} ^ {\ circ} \） C的具有锡岛的表面上沉积硅后形成的。带有基座的岛的生长是通过汽-液-晶机制发生的。从含锡基座的富锡岛中可以看到强烈的光致发光，其波长范围为1.3–1.7 \（\ mu \） m。