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Etching Kinetics of Si(111) Surface by Selenium Molecular Beam
Optoelectronics, Instrumentation and Data Processing Pub Date : 2021-03-20 , DOI: 10.3103/s8756699020050088
S. A. Ponomarev , D. I. Rogilo , A. S. Petrov , D. V. Sheglov , A. V. Latyshev

Abstract

Using in situ ultrahigh vacuum reflection electron microscopy, three modes of the etching kinetics of the Si(111) surface with a selenium molecular beam are revealed. In the low temperature region (\(\lesssim\) 650\({}^{\circ}\)C depending on the Se deposition rate), the etching kinetics is limited by the energy of formation and desorption of SiSe\({}_{2}\) molecules and the surface is completely covered by an impurity-induced silicon selenide phase ‘‘1 \(\times\) 1’’-Se. In the temperature range \({\sim}700{-}1100^{\circ}\)C the etching rate is limited by the amount of Se deposition flow and does not depend on the temperature, surface structure, and etching mechanism (step-layer or two dimensional-island). At high temperatures (\({\gtrsim}1150^{\circ}\)C), the sublimation of Si atoms begins to make the main contribution to the silicon flux from the surface. A theoretical model describing the temperature and kinetics of transitions between etching modes is formulated.



中文翻译:

硒分子束对Si(111)表面的刻蚀动力学

摘要

使用原位超高真空反射电子显微镜,揭示了硒分子束对Si(111)表面蚀刻动力学的三种模式。在低温区域(\(\ lesssim \) 650 \({} ^ {\ CIRC} \)温度取决于硒沉积速率)时,蚀刻动力学是由SISE的形成和解吸的能量限制\({ } _ {2} \)分子,表面完全被杂质诱导的硒化硅相“ 1 \(\ times \) 1''-Se覆盖。在温度范围\({\ sim} 700 {-} 1100 ^ {\ circ} \)C的蚀刻速率受Se沉积流量的限制,并且不取决于温度,表面结构和蚀刻机理(阶梯层或二维岛)。在高温(\({\ gtrsim} 1150 ^ {\\ circ} \) C)下,Si原子的升华开始对表面硅通量起主要作用。建立了描述蚀刻模式之间转变的温度和动力学的理论模型。

更新日期:2021-03-21
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