The formation mechanism of nanocone structure on silicon (Si) surface irradiated by helium plasma has been investigated by experiments and simulations. Impurity (molybdenum) aggregated as shields on Si was found to be a key factor to form a high density of nanocone in our previous study. Here to concrete this theory, a simulation work has been developed with SURO code based on the impurity concentration measurement of the nanocones by using electron dispersive x-ray spectroscopy. The formation process of the nanocone from a flat surface was presented. The modeling structure under an inclining ion incident direction was in good agreement with the experimental result. Moreover, the redeposition effect was proposed as another important process of nanocone formation based on results from the comparison of the cone diameter and sputtering yield between cases with and without the redeposition effect.

通过实验和模拟研究了氦等离子体辐照硅（Si）表面纳米锥结构的形成机制。在我们之前的研究中，发现作为屏蔽层聚集在 Si 上的杂质（钼）是形成高密度纳米锥的关键因素。为了具体化这一理论，基于使用电子色散 X 射线光谱法测量纳米锥的杂质浓度，使用 SURO 代码开发了模拟工作。介绍了从平坦表面形成纳米锥的过程。倾斜离子入射方向下的建模结构与实验结果吻合较好。而且，