We investigate material properties in Mo _x Si_1−x thin films with the goal of optimization for single-photon detection from UV to mid-IR wavelengths. Saturated internal detection efficiency appears to be related to film structure for this material. We demonstrate nanometer-wide meander devices with saturated internal efficiency at 370 nm wavelength and 3.4 K operation temperature. By reducing the film thickness in the optimized material, we demonstrate saturated internal detection efficiency at 1550 nm wavelength and 1 K operation temperature for micron-wide meander shaped single-photon detectors with wire widths up to 2.0 μm and active areas up to 362 362 μm².

我们研究了 Mo _x Si _{1- x}薄膜的材料特性，目的是优化从紫外到中红外波长的单光子检测。饱和内部检测效率似乎与这种材料的膜结构有关。我们展示了在 370 nm 波长和 3.4 K 工作温度下具有饱和内部效率的纳米级曲流器件。通过减少在优化的材料的膜厚度，我们证明饱和内部检测效率在1550nm波长和的1K操作温度为微米范围内的曲折状的单光子检测器与导线宽度达2.0 μ m和有源区高达362 362 μ中号²。