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Conducted Noise Simulation on AC–DC Converter Using SiC-MOSFET
IEEE Transactions on Industry Applications ( IF 4.4 ) Pub Date : 2021-01-18 , DOI: 10.1109/tia.2021.3052435
Wataru Kitagawa , Toshiya Kutsuna , Kazuki Kuwana , Yuki Kawamura , Takaharu Takeshita

Simulations performed from simpler and more accurate modeling help us to clarify the path and cause of noise and design filters that reduce common-mode noise. This article describes two types of simple simulation methods for the conducted noise in an ac–dc converter using SiC- mosfet , namely the analysis of high-frequency leakage current and the impedance characteristic analysis simulating the noise path, and shows the accuracy and effectiveness of the simulation by comparing the experimental and simulation results. The analysis of high-frequency leakage current is required measurement of the leakage current, but does not require an impedance analyzer. The impedance characteristic analysis must require an impedance analyzer, but does not have to operate in the actual device and measure the leakage current. In two methods, the error between the experimental and simulation results of the disturbance voltage is 10 dB, and the resonance point is closely simulated. Furthermore, this article describes a simulation reducing the conducted noise using modeled electromagnetic interference filters.

中文翻译:

使用SiC-MOSFET的AC-DC转换器上的传导噪声仿真

通过更简单,更准确的建模进行的仿真有助于我们弄清噪声的路径和原因,并设计出可以降低共模噪声的滤波器。本文介绍了两种简单的仿真方法,用于使用SiC的AC-DC转换器中的传导噪声 mosfet 分别是高频泄漏电流分析和模拟噪声路径的阻抗特性分析,并通过比较实验结果和仿真结果显示了仿真的准确性和有效性。高频泄漏电流的分析是泄漏电流的测量要求,但不需要阻抗分析仪。阻抗特性分析必须使用阻抗分析仪,但不必在实际设备中运行并测量泄漏电流。在两种方法中,干扰电压的实验结果与仿真结果之间的误差为10 dB,并且对谐振点进行了精确模拟。此外,本文介绍了使用建模的电磁干扰滤波器来降低传导噪声的仿真。
更新日期:2021-03-19
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