The hafnium oxide (HfO₂) material system offers a unique combination of outstanding physical properties, that enable a manifold of novel integrated ferroelectric, piezoelectric, and pyroelectric applications. Long‐term stability is an essential concern for nonvolatile memory devices, sensors, and nanoelectromechanical systems. Herein, the aging effects of the pyroelectric response in polycrystalline Si‐doped HfO₂ thin films in the field‐free case are reported. It is observed that aging effects are accelerated by high temperatures, lower film thicknesses, and higher dopant concentration. The decay of the pyroelectric coefficients and the dielectric permittivity exhibits a logarithmic time dependence. The full pyroelectric response is restored by repeated electric field cycling (i.e., deaging). After the aging process, a significant internal bias field is observed. It is concluded that the migration of positively charged oxygen vacancies in the films is responsible for this aging process.

中文翻译：

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铁电掺杂硅的氧化Ha薄膜的时效

氧化ha（HfO ₂）材料系统提供了出色的物理性能的独特组合，可实现多种新颖的集成铁电，压电和热电应用。对于非易失性存储设备，传感器和纳米机电系统，长期稳定性至关重要。这里，多晶硅掺杂HfO _2中热电响应的时效效应报告了无场情况下的薄膜。可以看出，高温，较低的膜厚度和较高的掺杂剂浓度会加速老化效果。热电系数和介电常数的衰减表现出对数时间依赖性。通过重复的电场循环（即老化）可以恢复完整的热电响应。在老化过程之后，观察到明显的内部偏置场。可以得出结论，薄膜中带正电荷的氧空位的迁移是造成这种老化过程的原因。