Abstract

An investigation is made of reducing the contrast in photosensitivity caused by photocurrents between inhomogeneities along n⁺ and p⁺ layers in a uniformly illuminated n⁺−p(n)−p⁺ silicon structure. Measurements and calculations are performed using a model that consists of two silicon solar cells with different photosensitivities and joined by a resistor. Agreement is achieved between measurements and calculation results.

中文翻译：

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减少非均匀n +-p（n）-p +硅结构的光敏性对比，通过照亮整个p–n结面来测量

摘要

调查是由减少由沿不均匀性之间的光电流在感光性的对比度的Ñ ⁺和p ⁺在一个均匀地照射的层Ñ ⁺ - p（Ñ） - p ⁺硅结构。使用由两个具有不同光敏性的两个硅太阳能电池组成并通过电阻连接的模型来执行测量和计算。测量和计算结果之间达成协议。