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Electrical resistivity of SmB6 thin films prepared by pulsed laser deposition with various heat treatment
Physica B: Condensed Matter ( IF 2.8 ) Pub Date : 2021-03-27 , DOI: 10.1016/j.physb.2021.413021
Marianna Batkova , F. Stobiecki , B. Szymański , P. Kuświk

Thin films of SmB6 were prepared by PLD on several substrates kept at ambient temperature or at 600 °C during the deposition. As shown, also post-deposition annealing at 600 °C can be used to obtain good quality SmB6, but heating the substrate during deposition results in higher normalized resistance. The highest value R(2 K)/R(300 K = 2.21 was achieved for the film deposited on a heated, polished ultra-low expansion glass ceramics substrate Clearceram®-Z. Electrical resistance measurements were performed at temperatures from 300 K down to 2 K. Numerical analysis showed that the resistivity can be described by a two-channel model with temperature activated and non-activated terms, while two energy scales were found. Activation energy WA = 3.7 − 4.8 meV, relevant in temperature interval 16  22 K, has been attributed to presence of a forbidden gap in SmB6 and WD = 0.31 − 0.37 meV, which corresponds to the region 2  3.3 K is assumed to be a consequence of an impurity band in the forbidden gap.



中文翻译:

SmB的电阻率6 脉冲激光沉积并经各种热处理制备的薄膜

SmB薄膜6 通过PLD在环境温度或保持在600的几种基材上制备 °C在沉积过程中。如图所示,还在600进行沉积后退火 °C 可以用来获得高质量的SmB6,但是在沉积过程中加热基板会导致更高的归一化电阻。最高价值[R(2 K)/[R(对于沉积在加热,抛光的超低膨胀玻璃陶瓷基板Clearceram®-Z上的薄膜,获得了300 K = 2.21。在300 K至2 K的温度下进行了电阻测量。数值分析表明,电阻率可以用具有温度激活项和非激活项的两通道模型描述,同时发现了两个能级。 w ^一个 = 3.7 − 4.8 meV,与温度间隔16有关 - 22 K,归因于SmB中存在禁带6w ^d = 0.31 − 0.37 meV,对应于区域2 - 3.3 K被认为是禁带中杂质带的结果。

更新日期:2021-04-02
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