In this letter, a millimeter-wave (mm-wave) dual-band bandpass filter is proposed with large bandwidth ratio by using gallium arsenide (GaAs)-based integrated passive device (IPD) technology. To realize small chip size, one dual-mode on-chip resonator is designed by using quasi-lumped capacitors and microstrip lines. In addition, multiple transmission zeroes are generated by further introducing both the electric and magnetic couplings between adjacent resonators. To realize large bandwidth ratio of two passbands, the external quality factors are investigated at both passband, and can be independently controlled. For demonstration, a 28-/50-GHz dual-band bandpass filter is designed, fabricated, and measured. The fractional bandwidth ratio is 7.8, which is much larger than the reported on-chip filters. Meanwhile, very low insertion loss of 0.58-dB is realized for the lower passband at 28 GHz, indicating the proposed dual-band bandpass filter a promising application in mm-wave wireless systems.

中文翻译：

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基于GaAs的集成无源器件技术的大带宽比毫米波双带通滤波器

在本文中，通过使用基于砷化镓（GaAs）的集成无源器件（IPD）技术，提出了一种具有大带宽比的毫米波（mm-wave）双带通滤波器。为了实现小尺寸芯片，通过使用准集总电容器和微带线设计了一个双模片上谐振器。另外，通过进一步在相邻谐振器之间引入电耦合和磁耦合来产生多个传输零。为了实现两个通带的大带宽比，在两个通带上都研究了外部品质因数，并且可以独立控制这些品质因数。为了演示，设计，制造和测量了28- / 50-GHz双频带带通滤波器。小数带宽比为7.8，比报告的片上滤波器大得多。同时，插入损耗非常低，为0。