The dynamics of the intrinsic threshold voltage ( ${V}_{{\text {TH}}}{)}$ shift in 650-V Schottky-type p-GaN gate HEMT under high-frequency switching is investigated by a bootstrap voltage clamping circuit in which the GaN HEMT serves as the key bootstrapping device. This new testing setup covers a wide range of OFF-state drain bias ( ${V}_{{\text {DSQ}}}{)}$ up to 400V, a short OFF-to-ON (or stress-to-sense) delay ( ${T}_{{\text {delay}}}{)}$ of 60ns, and a high switching frequency ( ${f}_{{\text {sw}}}{)}$ up to 2MHz. The dynamic ${V}_{{\text {TH}}}$ ’s dependences on ${V}_{{\text {DSQ}}}$ and ${f}_{{\text {sw}}}$ are characterized by this testing setup. A higher V _DSQ (up to 400V) results in a larger dynamic ${V}_{{\text {TH}}}$ shift ( $\Delta {V}_{{\text {TH}}}{)}$ . The $\Delta {V}_{{\text {TH}}}$ exhibits a gradually increasing trend under the continuous high-frequency switching mode. In addition, after continuous switching operation for $200\mu \text{s}$ , the maximum $\Delta {V}_{{\text {TH}}}$ shows no ${f}_{{\text {sw}}}$ dependence with a wide range of frequency from 50kHz to 2MHz.

中文翻译：

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肖特基型动态阈值电压的表征 p-高频开关下的GaN栅极HEMT

本征阈值电压（ $ {V} _ {{\ text {TH}}} {）} $ 通过自举电压钳位电路研究了高频开关下650V肖特基型p-GaN栅极HEMT的漂移，其中GaN HEMT用作关键的自举器件。这种新的测试设置涵盖了广泛的OFF状态漏极偏置（ $ {V} _ {{\ text {DSQ}}} {）} $ 高达400V，短的从开到关（或应力到检测）延迟（ $ {T} _ {{\ text {delay}}} {）} $ 60ns的高开关频率（ $ {f} _ {{\ text {sw}}} {）} $ 高达2MHz。动态的 $ {V} _ {{\ text {TH}}} $ 的依赖 $ {V} _ {{\ text {DSQ}}} $ 和 $ {f} _ {{\ text {sw}}} $ 此测试设置的特点。较高的V _DSQ（最高400V）导致较大的动态 $ {V} _ {{\ text {TH}}} $ 转移 （ $ \ Delta {V} _ {{\ text {TH}}} {）} $ 。这 $ \ Delta {V} _ {{\ text {TH}}} $ 在连续高频切换模式下呈现出逐渐增加的趋势。另外，在连续切换操作后 $ 200 \ mu \ text {s} $ ， 最大值 $ \ Delta {V} _ {{\ text {TH}}} $ 没有显示 $ {f} _ {{\ text {sw}}} $ 频率范围从50kHz到2MHz的依赖关系。