Current-induced magnetization switching is crucial in high-performance nonvolatile memory especially when the spin-transfer torque (STT) and spin-orbit torque (SOT) are employed in the mainstream magnetic random-access memory. However, in STT devices, the intrinsic mechanism leads to a long write latency, a low endurance, and a high-power consumption, while in SOT devices, a three-terminal structure is necessary to complete the read and write operations, causing a low space efficiency. In this work, we experimentally demonstrate a NAND-like spin-torque memory unit with the interplay of STT and SOT. The spin joint effect induced magnetic reversal is verified to be more energy-efficient and faster than that of STT. It also shows a great selectivity to ensure the reliability of the write operation. The memory unit, containing 8 magnetic tunnel junctions with a shared heavy-metal nanowire, is erased by a single SOT current and written by the combination of STT and SOT, showing the great potential for the high-density, ultrafast and energy efficient memory applications.

中文翻译：

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NAND类自旋扭矩存储单元的实验演示

电流感应的磁化切换在高性能非易失性存储器中至关重要，尤其是在主流磁性随机存取存储器中采用了自旋传递扭矩（STT）和自旋轨道扭矩（SOT）时。但是，在STT设备中，内在机制导致较长的写延迟，低的耐用性和高的功耗，而在SOT设备中，必须使用三端子结构来完成读写操作，从而降低了功耗。空间效率。在这项工作中，我们通过实验证明了具有STT和SOT相互作用的类NAND自旋扭矩存储单元。事实证明，自旋接头效应引起的磁逆转比STT的能效更高且速度更快。它还显示出极大的选择性，可确保写入操作的可靠性。内存单元