In this letter, we report solution-processed, high-performance Indium-Zinc-Oxide (IZO) thin-film transistors (TFTs). The annealing temperature of IZO films are studied and found that devices annealed at 350 °C exhibit the best performance. With the use of a thin Al _x O _y layer as the gate dielectric, one-volt IZO TFTs are demonstrated, showing a high current on/off ratio of > 10 ⁵ , a high mobility over 10 cm ² /Vs, and a low subthreshold swing (SS) of 83 mV/dec, which is fairly close to the theoretical limit of SS at 300 K. Such a high device performance is also found comparable to those deposited using vacuum-based methods. As a result, the presented devices might possess a great potential in low-cost, low-power electronics.

中文翻译：

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一伏，溶液处理的InZnO薄膜晶体管

在这封信中，我们报告了经过溶液处理的高性能铟锌氧化物（IZO）薄膜晶体管（TFT）。研究了IZO薄膜的退火温度，发现在350°C退火的器件表现出最佳性能。通过使用薄的Al _x O _y层作为栅极电介质，展示了一伏的IZO TFT，显示了> 10 ⁵的高电流开/关比， 超过10 cm ² / Vs的高迁移率 和低的电导率。阈下摆动（SS） 83 mV / dec的电压，这非常接近于 党卫军在300 K的温度下。如此高的器件性能也可与使用基于真空的方法沉积的器件媲美。结果，所提出的设备在低成本，低功率的电子产品中可能具有巨大的潜力。