This work reports the transient measurement of the AlGaN/GaN high electron-mobility transistor (HEMT) drift region potential in the high power state during switching. The effect of high power stress has been reported by device characterization after stress or during high power DC stress at voltages below the operating voltages to avoid device failure. However, transient measurement during high power stress is challenging, since the device can sustain the high power stress only for a few $\mu \text{s}$ before failure occurs. In this work, a test structure with voltage probe inserted in the drift region between the gate and the drain is used to perform real-time measurement of the drift region potential during the high power state at operating voltages. It is found that the high electric field formed at the gate side during the off-state stress propagates towards the drain side within a few $\mu \text{s}$ . The propagation speed of this high electric field increased with increase in drain voltage. It is proposed that trapping of hot channel electrons is causing this effect, and dynamic on-resistance measurement suggests that the traps are 0.44 eV below the conduction band.

中文翻译：

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高功率状态下GaN HEMT漂移区电势的瞬态测量

这项工作报告了在开关过程中在高功率状态下对AlGaN / GaN高电子迁移率晶体管（HEMT）漂移区电势的瞬态测量。通过在应力以下或在低于工作电压的高功率直流应力期间进行器件表征来报告高功率应力的影响，以避免器件故障。但是，在高功率压力下进行瞬态测量具有挑战性，因为该设备只能承受少量的高功率压力 $ \ mu \ text {s} $ 在发生故障之前。在这项工作中，使用在栅极和漏极之间的漂移区中插入电压探针的测试结构，以在高功率状态下在工作电压下实时测量漂移区电势。发现在关态应力期间在栅极侧形成的高电场在少数时间内向漏极侧传播。 $ \ mu \ text {s} $ 。该高电场的传播速度随着漏极电压的增加而增加。有人提出，热通道电子的俘获会引起这种效应，动态导通电阻测量表明，陷阱在导带以下为0.44 eV。