As theoretically predicted by Prof. Chua, the input signal frequency has a major impact on the electrical behavior of memristors. According with one of the so-called fingerprints of such devices, the resistive window, i.e. the difference between the low and high resistance states, shrinks as the frequency increases. Physically, this effect stems from the incapability of ions/vacancies to follow the external electrical stimulus. In terms of the electrical behavior, the collapse of the resistive window can be ascribed to the shift of the set and reset voltages toward higher values. In addition, for a fixed frequency, the resistive window increases with the signal amplitude. In this letter, we show that both phenomena, decrease and increase of the resistive window, can be consistently explained after considering the snapback effect and a balance model equation for the memory state of the device.

中文翻译：

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理解忆阻器件频率相关行为的新视角

正如蔡教授在理论上预测的那样，输入信号频率对忆阻器的电性能具有重大影响。根据此类设备的所谓指纹之一，电阻窗口IE高阻态和低阻态之间的差异随着频率的增加而缩小。从物理上讲，这种影响源于离子/空位无法跟随外部电刺激。就电性能而言，电阻窗口的崩溃可归因于设定电压和复位电压向更高值的偏移。另外，对于固定频率，电阻窗口随信号幅度而增加。在这封信中，我们表明，在考虑了器件的存储状态的骤回效应和平衡模型方程之后，可以一致地解释电阻窗口减小和增大的两种现象。