Photocatalysis-assisted chemical mechanical polishing, in which the photocatalysis oxidation and silica abrasives polishing are combined, is a novel finishing technique for 4H–SiC wafer. This paper characterizes the effect of pressure and abrasives on the MRR and surface quality and discusses mechanical and chemical interaction based three slurries that resulted in maximum material removal rate (1.18 μm/h) with PCMP slurry. The polished silicon carbide wafer was examined with atomic force microscope, transmission electron microscope and X-ray photoelectron spectroscopy for surface quality and material removal mechanism. The results show that an atomically smooth and flat 4H–SiC (0001) surface (Ra about 0.247 nm) was obtained by PCMP. The interface of crystal and amorphous layer of 4H–SiC wafer was flat without introducing crystallographic subsurface damage, and the atoms and lattice fringes of the crystal layer are arranged in regular order. The existence of a thin silicon oxycarbide layer, which are various forms of functional groups such as Si–C, Si–C–O, Si–O, Si₄C₄O₄, C–O, and C = O, at the interface. And, it also demonstrates that the amorphous layer is composed of oxide layer (4–6 nm) and distorted layer. The silicon carbide surface is mechanically activated, oxidized and mechanically removed in turn, which is the main method of material removal.

光催化辅助化学机械抛光结合了光催化氧化和二氧化硅磨料抛光，是一种用于4H–SiC晶片的新颖精加工技术。本文表征了压力和磨料对MRR和表面质量的影响，并讨论了基于机械和化学相互作用的三种浆料，这些浆料导致PCMP浆料的最大材料去除率（1.18μm/ h）。用原子力显微镜，透射电子显微镜和X射线光电子能谱检查抛光的碳化硅晶片的表面质量和材料去除机理。结果表明，通过PCMP获得了原子光滑且平坦的4H-SiC（0001）表面（Ra约为0.247 nm）。4H–SiC晶片的晶体和非晶层的界面平坦，没有引入结晶表面下的破坏，并且晶体层的原子和晶格条纹按规则顺序排列。存在薄的碳氧化硅层，这些层是各种形式的官能团，例如Si–C，Si–C–O，Si–O，Si_{接口处为4} C ₄ O ₄，C–O和C =O。并且，它还证明了非晶层由氧化物层（4–6 nm）和扭曲层组成。依次对碳化硅表面进行机械活化，氧化和机械去除，这是材料去除的主要方法。