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A power amplifier with bandwidth expansion and linearity enhancement in 130 nm complementary metal‐oxide‐semiconductor process
International Journal of RF and Microwave Computer-Aided Engineering ( IF 1.7 ) Pub Date : 2021-03-25 , DOI: 10.1002/mmce.22626
Cheng Cao 1, 2, 3 , Jiangfan Liu 1, 2, 3 , Yubing Li 1, 2, 3 , Tao Tan 1, 2, 3 , Zemeng Huang 1, 2, 3 , Ping Zhang 1, 2, 3 , Qingwen Li 1, 2, 3 , Zihang Qi 1, 2, 3 , Xiuping Li 1, 2, 3
Affiliation  

A power amplifier with bandwidth expansion and linearity enhancement in 130 nm complementary metal‐oxide‐semiconductor (CMOS) process is presented. A LC connected dual‐resonant network is proposed to achieve good broadband performance and high out‐band rejection capability simultaneously. Furthermore, the advanced multiple‐gated transistor technique is employed to cancel out odd‐order intermodulation and harmonic distortions. The PA is implemented in 130 nm CMOS process with an area of 1.17 mm × 0.92 mm. Measurement results demonstrate that the PA exhibits a peak power gain of 8 dB with a relative bandwidth of 38% while maintaining a low reflection coefficient of −23.2 dB, maximum saturation output power of 15.6 dBm, maximum OP1dB and OIP3 of 14.3 dBm and 19 dBm, and a peak power added efficiency of 21.3%, respectively. In addition, an out‐band rejection of 20 dB and 23.2 dB at 6.1 GHz and 14 GHz are measured.

中文翻译:

具有130 nm互补金属氧化物半导体工艺的带宽扩展和线性度增强的功率放大器

提出了一种在130 nm互补金属氧化物半导体(CMOS)工艺中具有带宽扩展和线性增强功能的功率放大器。建议使用LC连接的双谐振网络,以同时实现良好的宽带性能和高带外抑制能力。此外,采用了先进的多栅极晶体管技术来消除奇数阶互调和谐波失真。该PA采用130 nm CMOS工艺实现,面积为1.17 mm×0.92 mm。测量结果表明,PA的峰值功率增益为8 dB,相对带宽为38%,同时保持低反射系数为−23.2 dB,最大饱和输出功率为15.6 dBm,最大OP1dB和OIP3为14.3 dBm和19 dBm。 ,峰值功率附加效率分别为21.3%。此外,
更新日期:2021-05-02
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