This study focuses on surface characterization of modified indium tin oxide (ITO) for potential applications as anode in organic electronics devices. [4-iodophenyl]-silanetriol molecules were coated by self-assembled monolayers method on ITO surface. Kelvin Probe Microscopy, Scanning Tunneling Microcopy and X-ray Photoelectron Spectroscopy techniques were used to analyze the modified ITO surface. The results show that organic semiconductor material based on Phenyl group enhance surface morphology and increase the surface potential energy of ITO around ∼100meV and contribute the tunneling current that inject from Fermi energy level of the ITO. This study includes the influence of surface interactions on electrochemical and spectral features of compounds. The results are important in developing surface structures in amorphous layers, better understanding the mechanism of creation of such structures on ITO surface.

中文翻译：

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苯基基有机半导体材料改性铟锡氧化物薄膜表面势能的提高

本研究侧重于改性氧化铟锡 (ITO) 的表面表征，用于作为有机电子器件阳极的潜在应用。[4-碘苯基]-硅烷三醇分子通过自组装单分子层法涂覆在ITO表面。开尔文探针显微镜、扫描隧道显微镜和 X 射线光电子能谱技术用于分析改性 ITO 表面。结果表明，基于苯基的有机半导体材料增强了表面形貌，提高了ITO周围的表面势能。～100meV 并贡献从 ITO 的费米能​​级注入的隧穿电流。本研究包括表面相互作用对化合物电化学和光谱特征的影响。该结果对于开发非晶层中的表面结构，更好地理解在 ITO 表面上创建此类结构的机制非常重要。