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Efficiency enhancement of CZTS solar cells using structural engineering
Micro and Nanostructures ( IF 3.1 ) Pub Date : 2021-03-25 , DOI: 10.1016/j.spmi.2021.106872
Atul Kumar

We numerically performs structural engineering for lowering interfacial recombination, and enhancing efficiency of CZTS solar cells. Structural modification of controlling carrier density profile at CZTS/CdS interfaces, CZTS absorber surface region carrier density, CZTS surface region bandgap modification, Fermi level pining and tunneling at the CZTS/CdS junction are studied for their impact device performance. We observed that the lowering hole concentration and widening bandgap of CZTS in vicinity of CZTS/CdS junction, lower interface recombination and improve performance. Fermi level pinning near to conduction band edge at CZTS/CdS interface showed lower recombination as compared to the case where Fermi level is pinned at midgap at CZTS/CdS interface. The donor defects from buffer layer pins the Fermi level near conduction band and acceptor defect from absorber CZTS layer pins Fermi level near mid gap at CZTS/CdS interface. Intra band tunneling through high conduction band offset barrier maintain performance for upto 0.5 eV spike barrier. High hole density profile at CZTS/metal lower back contact interfacial recombination. These structural engineering numerical performed here, present bright aspect for improving efficiency of CZTS solar cells.



中文翻译:

使用结构工程提高CZTS太阳能电池的效率

我们在数值上执行结构工程,以降低界面重组并提高CZTS太阳能电池的效率。研究了在CZTS / CdS界面上控制载流子密度分布的结构修改,CZTS吸收体表面区域载流子密度,CZTS表面区域带隙修改,CZTS / CdS结处的费米能级钉扎和隧穿,以研究它们的冲击器件性能。我们观察到CZTS / CdS结附近的CZTS空穴浓度降低和带隙变宽,界面重组降低,性能提高。与费米能级钉扎在CZTS / CdS界面的中间能隙的情况相比,费米能级钉扎在CZTS / CdS界面的导带边缘附近显示出较低的重组。缓冲层的施主缺陷使导带附近的费米能级固定,而吸收体CZTS层的吸收体缺陷使CZTS / CdS界面的中间隙附近的费米能级固定。通过高导带偏置势垒的带内隧穿可保持高达0.5 eV尖峰势垒的性能。CZTS /金属下背接触界面复合时的高孔密度分布。此处执行的这些结构工程数值为提高CZTS太阳能电池的效率提供了亮眼的一面。

更新日期:2021-03-30
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