Thermal evaporation technique has been used to prepare PbS doped ZnO Nanowires films growth on Si (100) and glass substrates. EDX technique was employed to investigate the element’s contents of the films materials. Pb and S concentration in the Nanowires films were about at 8% for each one. The XRD pattern showed the structure of ZnO is wurtzite with (002) preferred orientation. Thickness and morphology of the films were explored from cross section of the surface films, respectively, using scanning electron microscopy images. Scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) images confirmed the ZnO Nanowires and modifications of the morphology when adding PbS. The film deposited without doping (0 ​wt %) was dense structured. However, PbS: ZnO was Nanowires structure. The optical band gap increased with increase the concentrations of PbS. Photoluminescence measurements PL used to estimate band gap for prepared films. Raman and EDX indicate ZnO Nanowires stoichiometry film.

热蒸发技术已被用于制备在Si（100）和玻璃基板上生长的PbS掺杂的ZnO纳米线薄膜。采用EDX技术研究了薄膜材料中元素的含量。纳米线薄膜中的铅和硫的浓度分别约为8％。XRD图谱表明ZnO的结构为纤锌矿，其取向优选为（002）。使用扫描电子显微镜图像分别从表面膜的横截面探索膜的厚度和形态。扫描电子显微镜（SEM）和高分辨率透射电子显微镜（HRTEM）图像证实了添加PbS时ZnO纳米线及其形态的改变。没有掺杂（0重量％）沉积的薄膜结构致密。然而，PbS：ZnO为纳米线结构。光学带隙随着PbS浓度的增加而增加。光致发光测量PL用于估计已制备薄膜的带隙。拉曼和EDX表示ZnO纳米线化学计量薄膜。