Abstract

Mercury cadmium telluride n-Hg_1 – xCd_xTe (HgCdTe) films with near-surface wide-bangap layers were grown by molecular beam epitaxy on Si(013) substrates. Admittance of the metal–insulator–semiconductor (MIS) structure was measured in samples based on the initial HgCdTe film and the same films after implantation with As⁺ ions and after subsequent thermal annealing. Methods taking into account the presence of near-surface graded-gap layers and slow surface states were used to determine the main parameters of these layers upon technological procedures involved in the production of photodiodes.

中文翻译：

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As +离子注入和退火对梯度N-Hg 0.78 Cd 0.22 Te薄膜近表面层电学性能的影响

摘要

通过分子束外延在Si（013）衬底上生长具有近表面宽bangap层的碲化镉汞n -Hg _{1 –  x} Cd _x Te（HgCdTe）膜。在样品中，基于初始HgCdTe膜和注入As ⁺离子后以及随后的热退火后的相同膜，测量了金属-绝缘体-半导体（MIS）结构的导纳。考虑到光电二极管生产中涉及的技术程序，使用考虑了近表面渐变间隙层和慢表面状态的存在的方法来确定这些层的主要参数。