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Express Characterization of the HgCdTe/CdHgTe Quantum Well Waveguide Heterostructures with the Quasi-Relativistic Carrier Dispersion Law by Room-Temperature Photoluminescence Spectroscopy
Technical Physics Letters ( IF 0.6 ) Pub Date : 2021-03-23 , DOI: 10.1134/s1063785021020115
S. V. Morozov , V. V. Utochkin , V. V. Rumyantsev , M. A. Fadeev , A. A. Razova , V. Ya. Aleshkin , V. I. Gavrilenko , N. N. Mikhailov , S. A. Dvoretskii

Abstract

An express technique for characterizing narrow-gap waveguide heterostructures with the HgCdTe/CdHgTe quantum wells is proposed, which is based on an analysis of their room-temperature luminescence response. Advantages and constraints of this characterization technique are discussed in comparison with methods for more detailed diagnostics that entail photoluminescence and photoconductivity measurements in a wide temperature range.



中文翻译:

HgCdTe / CdHgTe量子阱波导异质结构的准相对论载流子色散规律的室温光致发光光谱表征

摘要

提出了一种基于HgCdTe / CdHgTe量子阱表征窄间隙波导异质结构的快速技术,该技术基于对它们的室温发光响应的分析。与更详细的诊断方法(包括在宽温度范围内进行光致发光和光电导率测量)相比较,讨论了该表征技术的优势和局限性。

更新日期:2021-03-23
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