Low temperature annealing effect on the structure, residual stress and local chemical order of Ni₂MnGa alloys thin films were investigated by atomic force microscopy, x-ray diffraction and x-ray stress analyses as well as extended x-ray absorption fine structure. Thin films were prepared by sputtering on GaAs substrates maintained at room temperature and 300 °C during deposition. The samples prepared at 300 °C were subsequently annealed at 150 °C and 300 °C for one and half hour. X-ray diffraction measurements indicated both a development of crystalline texture in which austenite (110) crystalline planes are preferentially aligned parallel to the film plane as well as compressive residual stress, mainly induced by the accommodation of the film on the substrate surface and by heating-cooling in the growth process. Atomic force microscopy analyses reveal a surface morphology dominated by a topography of hillocks and peaked massifs, whose roughness increases by about twenty times with the increase in the crystalline texture induced by annealing at 300 °C of the samples. Interestingly, extended x-ray absorption fine structure analysis performed at Mn K-edge indicate that residual stress is preserved even after significant increase of the structural and chemical ordering induced by the low temperature annealing.

低温退火对Ni ₂的结构，残余应力和局部化学顺序的影响通过原子力显微镜，X射线衍射和X射线应力分析以及扩展的X射线吸收精细结构研究了MnGa合金薄膜。通过溅射在沉积期间保持在室温和300°C的GaAs衬底上制备薄膜。随后将在300°C下制备的样品在150°C和300°C下退火一个半小时。X射线衍射测量既表明了晶体织构的发展，其中，奥氏体（110）晶面优先平行于薄膜平面排列，还存在压缩残余应力，其主要是由薄膜在基材表面的容纳和加热引起的。 -在生长过程中冷却。原子力显微镜分析揭示了一个表面形态，该形态主要由丘陵和峰顶的地形组成，其粗糙度随样品在300°C退火引起的结晶织构的增加而增加约20倍。有趣的是，在Mn K边缘进行的扩展X射线吸收精细结构分析表明，即使在低温退火引起的结构和化学有序性显着增加后，仍保留了残余应力。